Shielded gate field effect transistors (SGTs) are more conducive to the flexible application of semiconductor integrated circuits due to their low gate drain capacitance cgd, low on-resistance, and high voltage withstand performance. Specifically, in a shielded gate field effect transistor, by setting a shielding electrode below the gate electrode, the gate drain capacitance can be significantly reduced, and the drift region of the shielded gate field effect transistor also has a high impurity carrier concentration, which can provide additional benefits for the breakdown voltage of the device, and can correspondingly reduce the conduction resistance.