On March 26th, according to media reports, sources claimed that Samsung Electronics has achieved a threefold increase in yield for its 3-nanometer Gate All Around (GAA) process, from the previous 10% to 20% to between 30% and 60%. However, this still lags behind its competitor TSMC.

In addition, TSMC also announced that it will expand its production of 3-nanometer wafers to about 100000 pieces per month this year, which has left Samsung almost unable to catch up with its contract manufacturing competitor TSMC. The report points out that Samsung Electronics has invested more effort in its second-generation 3-nanometer GAA process, and has made improvements in power consumption, performance, and logic region, with reportedly yield comparable to TSMC's N3P nodes. However, this has not attracted more customers to Samsung.

A report suggests that in order to regain recognition from previous customers such as Qualcomm, Samsung needs to increase yield to 70%. And these companies will continue to choose TSMC in the foreseeable future.

Earlier this month, South Korean media reported that Samsung Electronics had notified customers and partners to rename the second-generation 3-nanometer process to 2-nanometer process starting from the beginning of this year. An industry insider said, "We have received notification from Samsung Electronics that they are renaming the second-generation 3-nanometer process to a 2-nanometer process. The second-generation 3-nanometer contract signed last year has also been changed to a 2-nanometer process, so we need to sign a new contract in the near future."

According to reports, the 2nm OEM collaboration between Meta and Samsung was finalized during Meta CEO Zuckerberg's visit to South Korea. Korean media cited anonymous officials as saying that Zuckerberg also revealed Meta's dependence on TSMC during a meeting with South Korean President Yoon Seok yeol, but the current situation is "unstable" mainly due to TSMC's tight production capacity, which may affect supply Meta in the long run.

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