The gallium nitride power bank with PFC (power factor correction)+QR (quasi resonant) structure is a mobile power source that combines efficient AC-DC conversion and portable energy storage technology. It uses gallium nitride (GaN) power devices to improve power density and charging efficiency.

Core architecture and working principle。PFC stage: adopting Boost boost topology (such as critical conduction mode CRM), improving input power factor (PF>0.9), reducing grid harmonic interference (THD<15%), and adapting to wide voltage input (90-264V). QR level: Based on quasi resonant flyback topology, valley switching technology is used to reduce switching losses, combined with the high-frequency characteristics of GaN devices (100kHz-1MHz), to achieve soft switching (ZVS) with an efficiency of over 93%. Advantages of Gallium Nitride: GaN's low on resistance (Rds (on)) and high switching frequency reduce the volume of transformers, allowing power banks to maintain a compact size (such as power density>1W/cm ³) while supporting 65W-140W fast charging. Its internal composition diagram is shown below:

Typical application, multi device fast charging: such as 2C1A interface design, providing power for laptops, phones, and tablets simultaneously.Travel portability: Integrated AC plug, direct wall charging mode, adapter free. PFC+QR gallium nitride power banks are becoming the mainstream solution for high-power mobile power supplies, and will be further popularized in the future as GaN costs decrease. The recommended products for this type of product by Aisike Microelectronics are shown in the following figure: