Gallium Nitride (GaN) power bank is an efficient fast charging mobile power supply that combines gallium nitride power devices, with advantages such as high power density, fast charging, and lightweight size. Compared to traditional silicon-based power banks, GaN devices can significantly improve charging efficiency and reduce volume due to their high electron mobility, low on resistance, and excellent high-frequency characteristics.

Its core feature is high-power fast charging: supporting PD 65W or even higher power output, it can quickly charge laptops, phones, tablets and other devices (such as charging 50% of iPhone's battery in 30 minutes). Compact and lightweight: GaN's high-frequency characteristics allow for the use of smaller transformers and capacitors, reducing the size of power banks by 30% to 50% compared to traditional solutions. Multi protocol compatibility: usually supports fast charging protocols such as PD, QC, PPS, SCP, etc., and is compatible with mainstream brand devices. Low heat generation and high safety: GaN's low switching loss reduces energy waste, combined with intelligent temperature control and multiple protections (overvoltage/overcurrent/short circuit protection), enhancing safety. Its internal composition diagram is shown below:

Gallium nitride power banks are becoming a high-end choice in the mobile power market, and will be further popularized in the future as GaN costs decrease. The recommended products for this type of product by Asic Microelectronics are shown in the following figure: